Global Leader in ALD Technology

  • 메인
  • R&D
  • Lucida™ C series MOCVD

LucidaTM C series MOCVD

Metal-organic chemical vapor deposition system for R&D applications

LucidaTM C series MOCVD

Lucida GS Series


  • Oxide, metal, metal nitride......
  • 100~300mm wafers
  • Applications of R&D
  • Very low price
  • Various additional option


  • MOCVD thin oxide, metal and metal nitride with good thickness uniformity
  • Advanced process kit and small-volume chamber
  • Direct plasma system(optional)
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Minimized gas supply line length
  • Load-lock system

Technical Specifications

Technical Specifications
Substrate Size 150~300 mm
Substrate Temperature 25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Precursor Sources 3, heated 2 sources
Footprint 2600(L) x 650(W) x 1500(H) mm(include MTB)
Deposition Mechanism Dual shower-head type
Compatibility Clean room class 100
Control System PLC/PC control base (full auto)
Optional Up to 4 heated sources
Optional Lucida cooler(2ch)
Optional Load-lock system
Optional Direct plasma system