Global Leader in ALD Technology
- PRODUCTS
- R&D
- Lucida™ C series MOCVD
LucidaTM C series MOCVD
Metal-organic chemical vapor deposition system for R&D applications
LucidaTM C series MOCVD
Applications
- Oxide, metal, metal nitride......
- 100~300mm wafers
- Applications of R&D
- Very low price
- Various additional option
Features
- MOCVD thin oxide, metal and metal nitride with good thickness uniformity
- Advanced process kit and small-volume chamber
- Direct plasma system(optional)
- Small foot print
- Totally integrated process module
- Easy process control
- Minimized gas supply line length
- Load-lock system
Technical Specifications
| Substrate Size | 150~300 mm |
|---|---|
| Substrate Temperature | 25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer |
| Precursor Sources | 3, heated 2 sources |
| Footprint | 2600(L) x 650(W) x 1500(H) mm(include MTB) |
| Deposition Mechanism | Dual shower-head type |
| Compatibility | Clean room class 100 |
| Control System | PLC/PC control base (full auto) |
| Optional | Up to 4 heated sources |
| Optional | Lucida cooler(2ch) |
| Optional | Load-lock system |
| Optional | Direct plasma system |