Global Leader in ALD Technology
- PRODUCTS
- R&D
- Lucida™ D series ALD
LucidaTM D series ALD
Atomic layer deposition system for R&D applications
LucidaTM D series ALD
Applications
- Thin film process for ALD research
: Al2O3, HfO2, ZrO2, TiO2, ZnO …… - 100~200mm wafers
- Applications of R&D
- Very low price
Features
- ALD ultra-thin high-k dielectric with good thickness uniformity and 100% conformal step coverage
- Advanced process kit and small-volume chamber for short cycle times
- Extremely materialize ALD mechanism (traveling wave method)
- Small foot print
- Totally integrated process module
- Easy process control
- Minimized gas supply line length
Technical Specifications
| Substrate Size | 100~200 mm |
|---|---|
| Substrate Temperature | 25℃ ~ 350 ℃ (± 0.2 ℃) @ 1Torr, in wafer |
| Precursor Sources | 3, heated 2 sources and H2 O source |
| Deposition Uniformity | <±2% |
| Footprint | 950 x 700 mm |
| Compatibility | Clean room class 100 |
| Control System | PC control base (full auto) |
| Optional | Up to 4 heated sources |
| Optional | Lucida cooler (2ch) |