Applications
• a-Si, Si3N4, SiO2 …….
• 100~200mm wafers
• 100nm to ≤45nm devices
Benefits
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Applications of R&D.
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Very low price
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Various additional option (In situ cleaning)
Features
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PECVD thin a-Si, Si3N4 and SiO2
with good thickness uniformity
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Advanced process kit and small-volume
Chamber
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Direct plasma system
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Small foot print(1000X700mm)
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Totally Integrated process module
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Easy process control with Delphi software
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Minimize gas supply line length
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Load-lock system
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Lucida P200-PL
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Technical specifications
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Substrate size
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>100 mm
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Sub. temperature
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25℃ ~ 400℃
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Precursor sources
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5%SiH4/N2, NH3,
N2O
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Foot print
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1000 x 700 mm
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Control
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Delphi-PC
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Optional
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System Cleaning
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