Semiconductor

Lucida S series

Solar Cell

Lucida GS series

Display

Lucida GD series

R & D

Lucida D series

Lucida M series

Lucida C series

Lucida G series

Lucida P series

 

Lucida C series MOCVD

 

Applications

Oxide, Metal, Metal nitride

100~200mm wafers

100nm to 45nm devices

 

Benefits

• Applications of R&D.

• Very low price

• Various additional option

 

Features

• MOCVD thin oxide, metal and metal nitride

with good thickness uniformity

• Advanced process kit and small-volume

Chamber

• Direct plasma system(optional)

• Small foot print(1000X700mm)

• Totally Integrated process module

• Easy process control with Delphi software

• Minimize gas supply line length

• Load-lock system(optional)

 Lucida C100-PL

 Technical specifications

 Substrate size

 >100 mm

 Sub. temperature

 25 ~ 400

 Precursor sources

 3, heated

 Foot print

 1000 x 700 mm

 Control

 Delphi-PC

 Optional

 Up to 4 heated sources

 

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